| Titel | Art | ISBN-13 | Erschei- nungsjahr | andere Autoren |
|---|---|---|---|---|
| Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications | Hardcover | 978-981-15-1211-7 | 2019 | Byung-Eun Park · Hiroshi Ishiwara · Shigeki Sakai · Sung-Min Yoon |
| Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications | " | 978-94-024-0839-3 | 2016 | Byung-Eun Park · Hiroshi Ishiwara · Shigeki Sakai · Sung-Min Yoon |
| Ferroelectric Random Access Memories: Fundamentals and Applications | Taschenbuch | 978-3-642-07384-7 | 2010 | Hiroshi Ishiwara · Yoshihiro Arimoto |
| Ferroelectric Random Access Memories: Fundamentals and Applications | Gebunden | 978-3-540-40718-8 | 2004 | Hiroshi Ishiwara · Yoshihiro Arimoto |
| Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications | Taschenbuch | 978-3-642-06330-5 | 2010 | Yoshihiro Ishibashi |
| Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications | Gebunden | 978-3-540-24163-8 | 2005 | " |