Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics)

by: Byung-Eun Park · Hiroshi Ishiwara · Masanori Okuyama · Shigeki Sakai · Sung-Min Yoon

Hardcover

ISBN: 978-981-15-1211-7

ISBN-10: 981-15-1211-6

Springer · 22. December 2019

See also:
2016HardcoverFerroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics)