| title | media type | ISBN-13 | year of publica- tion | other author(s) |
|---|---|---|---|---|
| Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications | Hardcover | 978-981-15-1211-7 | 2019 | Byung-Eun Park · Masanori Okuyama · Shigeki Sakai · Sung-Min Yoon |
| Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications | " | 978-94-024-0839-3 | 2016 | Byung-Eun Park · Masanori Okuyama · Shigeki Sakai · Sung-Min Yoon |
| Ferroelectric Random Access Memories: Fundamentals and Applications | Taschenbuch | 978-3-642-07384-7 | 2010 | Masanori Okuyama · Yoshihiro Arimoto |
| Ferroelectric Random Access Memories: Fundamentals and Applications | Gebunden | 978-3-540-40718-8 | 2004 | Masanori Okuyama · Yoshihiro Arimoto |